NEW CONCEPTS FOR SOLID STATE MICROWAVE GENERATORS
Quarterly rept. no. 3, 1 Apr-30 Jun 1963
CLEVITE TRANSISTOR PALO ALTO CA SHOCKLEY TRANSISTOR DIV
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A new design of transit-time device having minimum unused area is described. The first experimental units showed abnormally high emitter capacitance at low forward bias and low cutoff frequency which is not yet understood. Previous theory of the optimum operating frequency is modified and corrected. New small-area PIN diodes made epitaxially with antimony doping showed a transition time of about 0.5 nsec at a 2.4 ampere extraction current. At this current level, they appear to be limited by carrier storage effects rather than by capacitance.
- Electrical and Electronic Equipment