EPITAXIAL GROWTH OF QUARTZ CRYSTALS.
Quarterly progress rept. no. 3, 1 Jan-31 Mar 63,
WESTINGHOUSE ELECTRIC CORP PITTSBURGH PA
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Investigations of the feasibility of the chemi cal transport technique, using hydrofluoric acid as the transport agent, for the epitaxial growth of quartz on alpha-quartz substrates in a closed system have continued. The grown layers obtained at high deposition rates, say 1 micronhr, were characterized by a cobblestone appearance and were found to be non-single crystalline by the electron diffraction technique. Some grown layers of 2-4 microns thickness obtained at lower deposition rates, say 0.1 micronhr, had appearance similar to that of the original substrate. The use of foreign substrates for the epitaxial growth of quartz was also investi gated. Grown layers on 111 oriented germanium substrates obtained at deposition rates of ap proximately 0.1 micronhr exhibited growth pyramids in some areas. Silica layers grown on 111 oriented silicon substrates were structure less and tightly adherent, suggesting potential applications in semiconductor technology. The possibility of using single crystal germania as substrates is being investigated. Author