Accession Number:

AD0416396

Title:

SEMICONDUCTOR DEVICE CONCEPTS.

Descriptive Note:

Corporate Author:

GENERAL ELECTRIC CO SYRACUSE N Y

Personal Author(s):

Report Date:

1963-06-28

Pagination or Media Count:

9.0

Abstract:

Some further experience and problems with con tamination encountered in halogen vapor synthesis of GaAs1-x Px crystals are described. The possibility of oxygen contamination of GaAs1-x Px during vapor synthesis is discussed. Some experiments which bear upon the direct-indirect transition and lower wavelength possibilities of GaAs1-x Px are described. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE