SEMICONDUCTOR DEVICE CONCEPTS.
GENERAL ELECTRIC CO SCHENECTADY N Y
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Injection electroluminescence has been observed in Cu2S-ZnS and Cu2Se-ZnSe heterojunctions. The light emission occurs through hole injection from the p-type Cu chalogenide into n-type ZnS or ZnSe. At room temperature the light emission from the Cu2S-ZnS and the Cu2Se-ZnSe junctions originates at the Cu or self-activated lumines cence centers. At 77K edge emission peaking at 2.68 eV has been observed from the Cu2Se-ZnSe diodes with 2V dc applied across the junction. A tentative model for the band structure of the Cu chalcogenide-II-VI compound heterojunctions is presented. Studies on the double acceptor center in CdS have continued with the discovery that these centers can be produced by electron ir radiation as well as by Cd firing. Some pre liminary conclusions from studies of the dif fusion of Cd in CdS are also presented. The junction laser threshold analysis has been ex tended. Most of the assumptions and approxima tions previously present have been eliminated. Author