Accession Number:

AD0416047

Title:

GALLIUM ARSENIDE VARACTOR DIODES.

Descriptive Note:

Final development rept., 27 June 62-27 June 63,

Corporate Author:

RADIO CORP OF AMERICA SOMERVILLE N J

Personal Author(s):

Report Date:

1963-08-26

Pagination or Media Count:

79.0

Abstract:

Three types of devices for high efficiency power conversion between 12Gc and 24Gc were designed. The first type, Device A, was designed to yield 40 conversion efficiency, with a minimum of 25mw power input. Device and C were designed to handle a minimum 100mw and 250mw input power, re spectively. High cutoff diodes require an optimum combination of breakdown, series resistance, and junction capacitance. The use of pnn epitaxial structures, with closely controlled n-region properties, offer the best means of achieving this goal. A number of excellent devices were fabricated with such material. Since, however, the technology of gallium arsenide epitaxial material preparations is still at an early stage, mechanical eans of controlling the diode base thickness were also investigated. A well technique in which the base region directly under the junction is minimized has proved to be a practical means of fabricating high quality diodes. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE