HIGH-TEMPERATURE THERMAL CONDUCTIVITY MEASURE MENTS IN SEMICONDUCTORS.
Status rept., 1 June-31 Aug 63,
SOUTH DAKOTA SCHOOL OF MINES AND TECHNOLOGY RAPID CITY
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Efforts concerned the measurement of the contact and bulk thermal conductivities of semiconductors at temperatures above room temperature by means of the series comparative method. Measurements of thermal conductivity K of highly-doped p-type InSb were completed. Results on three samples are given. Calculations of the approximate thermal resistivities limited by lattice Umklapp scattering and by impurities are presented. A series comparison method was employed in measur ing thermal conductivity and effects of a magnetic field on transport properties of one sample of TiTeS and on three heavily doped samples of p-type InSb. Author