Accession Number:

AD0415923

Title:

THE TRAVELLING SOLVENT METHOD OF CRYSTAL GROWTH.

Descriptive Note:

Final summary rept.,

Corporate Author:

TYCO LABS INC WALTHAM MASS

Personal Author(s):

• Weinstein ,M.
• Wright ,M. A.
• Griffiths ,L. B.
• Mlavsky,A. I.

Report Date:

1963-07-01

Pagination or Media Count:

30.0

Abstract:

The growth of single crystals of GaAs and SiC by a Travelling Solvent Method is discussed. The effect of temperature, temperature gradient, zone thickness, and crystal face relationship on crystal growth by TSM was investigated. Purification of the GaAs crystals and a decrease in dislocation density occurred during crystal growth by TSM. For GaAs crystal growth from Ga, the process was found to be diffusion controlled. P-N junctions were grown in GaAs by TSM. These junctions all showed the square law behavior characteristic of an extremely abrupt junction. Author

Descriptors:

• *SEMICONDUCTORS
• *SILICON ALLOYS
• *GALLIUM ALLOYS
• CRYSTAL GROWTH
• SINGLE CRYSTALS
• CARBON ALLOYS
• ARSENIC ALLOYS
• INTERMETALLIC COMPOUNDS
• PURIFICATION
• ZONE MELTING
• SEMICONDUCTOR DIODES
• SILICON COMPOUNDS
• GALLIUM COMPOUNDS
• CARBIDES
• ARSENIDES

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE