THE TRAVELLING SOLVENT METHOD OF CRYSTAL GROWTH.
Final summary rept.,
TYCO LABS INC WALTHAM MASS
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The growth of single crystals of GaAs and SiC by a Travelling Solvent Method is discussed. The effect of temperature, temperature gradient, zone thickness, and crystal face relationship on crystal growth by TSM was investigated. Purification of the GaAs crystals and a decrease in dislocation density occurred during crystal growth by TSM. For GaAs crystal growth from Ga, the process was found to be diffusion controlled. P-N junctions were grown in GaAs by TSM. These junctions all showed the square law behavior characteristic of an extremely abrupt junction. Author