Accession Number:

AD0415755

Title:

INVESTIGATION OF HOT ELECTRON EMITTER.

Descriptive Note:

Scientific rept. no. 4, 1 Mar-31 May 63.

Corporate Author:

HP ASSOCIATES PALO ALTO CALIF

Personal Author(s):

Report Date:

1963-05-31

Pagination or Media Count:

16.0

Abstract:

The resistivity of thin gold films on silicon substrates has been studied. The best films were evaporated at pressures less than 10 to the -8th power Torr and on a 200 C substrate. Evidence is presented for some spectral reflection of conduction electrons by the film boundaries. Gold films about 100 Angstroms thick have been prepared with sheet resistance as low as 6 ohms. A hot elec tron triode with a single crystal GaAs point emitter, a gold base, and a single crystal Si collector is described. This triode exhibits a current transfer ratio alpha of 0.05 over several decades of collector current, and the emitter and collector currents are proportional to exp q Veb1.04 kT. A discussion is given of the fabrication of hot electron triodes utilizing an evaporated CdS collector. The techniques of CdS doping and evaporation are described. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE