MOLECULAR CIRCUIT DEVELOPMENT.
Quarterly rept. no. 13, 15 May-15 Aug 63.
MELPAR INC FALLS CHURCH VA
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Research was continued on a program to conduct research and development on materials and techniques suitable for exploitation in the formation of molecular circuits. The current emphasis in materials research is on semiconductive and dielectric films for high-temperature application. Semiconductive films are being produced by the usual film-forming techniques chemical vapor deposition as with silicon carbide, cathodic sputtering as with aluminum antimonide and silver telluride, and vacuum evaporation as with cadmium selenide. Attention is currently being directed toward the amorphous semiconductors. Characterization of mixed neodymium oxide-boric oxide films constitutes the chief effort in the area of dielectric films. Properties of high-temperature capacitors are being systematically investigated. Intensive work on field effect devices continues. Theoretical predictions concerning the functioning of devices as current limiters were satisfied in experimentally determined circuit characteristics. A voltage-controlled oscillator circuit comprised entirely of thinfilm components is also described. Author