Accession Number:

AD0411614

Title:

Semiconductor Single-Crystal Circuit Development

Descriptive Note:

Final rept

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS

Personal Author(s):

Report Date:

1963-03-01

Pagination or Media Count:

161.0

Abstract:

A description is given of the design and experimental investigation of silicon functional electronic blocks using, primarily, the circuit analog design technique. During the investigation feasibility was established for a number of useful linear circuit functions. Fabrication techniques, a problem in earlier experimental work, have been overcome in most cases. A hermetically sealed package was developed which established a new order of magnitude for practical size reduction. Also presented is work done in the exploration of other semiconductor phenomena. Falloff of alpha at low collector currents in silicon transistors is shown to be due to a shunt-diode current originating at the emitter base junction periphery hence improved performance through diffusion and oxidation studies may be possible. A capacitor with linear voltage-capacitance characteristic and an inductor, utilizing a four-terminal field effect gyrator, have been analyzed and appear promising for silicon FEBs. Fabrication of satisfactory devices will require improved control of epitaxial material. GaAs P-N junctions are efficient sources of infrared radiation and appear promising for electro-optical FEBs.

Subject Categories:

  • Solid State Physics
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE