INTEGRATED SILICON DEVICE TECHNOLOGY. VOLUME I RESISTANCE
Interim rept., Jan-Apr 1963
RESEARCH TRIANGLE INST (RTI) RESEARCH TRIANGLE PARK NC
Pagination or Media Count:
Conventional and unconventional methods of achieving the resistive function in integrated silicon devices are discussed. The properties and types of resistors made of silicon are considered in some detail as well as general design procedures. Many charts and graphs are reproduced in the hope of providing a convenient source of information pertinent to the design of resistors for integrated silicon devices. The more recent trend toward combining thin film passive components on a silicon substrate containing the active elements is discussed in less detail, not because this technique is felt to be less important but because information is sparse on such devices and their fabrication.
- Solid State Physics