Accession Number:

AD0408664

Title:

SEMICONDUCTOR DEVICE CONCEPTS

Descriptive Note:

Corporate Author:

GENERAL ELECTRIC CO SCHENECTADY NY

Personal Author(s):

Report Date:

1963-02-01

Pagination or Media Count:

66.0

Abstract:

The Cd-CdS liquidus was measured between 700 de grees and 1250 degrees C. In the low-temperature region, the liquidus rises exponentially with temperature similar to that observed in III-V semiconducting compound systems. A new electri cally active defect center, believed to be a native double acceptor, was observed in CdS. It shows identical behavior to a center concurrently observed in CdTe in this laboratory. These centers are formed during heat treatment in a Cd atmosphere. The centers are similar to the double acceptor centers observed in Ge in that they become very effective hole traps at low temperatures.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE