THIN FILM ACTIVE DEVICES
Quarterly rept. no. 2, 22 Sep-22 Dec 1962
PHILCO CORP BLUE BELL PA
Pagination or Media Count:
The use of evaporated, rather than thermally grown, layers of Al2O3 has alleviated the shorting problem in the MEA tunnel emission device. High input impedance devices showing transconductance values as high as 25,000 micro mhos have been obtained in this way. A tentative equivalent circuit for the device is presented. Studies of the conduction processes in CdS-Al2O3-Al diodes continue. Thin films of CdS show resistivities of approximately 0.1 ohm-cm, mobilities of 10 cm squaredV-sec, and carrier concentrations of 7 x 10 to the 18th powercm cubed.
- Solid State Physics
- Electrical and Electronic Equipment