Accession Number:

AD0408472

Title:

THIN FILM ACTIVE DEVICES

Descriptive Note:

Quarterly rept. no. 2, 22 Sep-22 Dec 1962

Corporate Author:

PHILCO CORP BLUE BELL PA

Personal Author(s):

Report Date:

1962-12-22

Pagination or Media Count:

87.0

Abstract:

The use of evaporated, rather than thermally grown, layers of Al2O3 has alleviated the shorting problem in the MEA tunnel emission device. High input impedance devices showing transconductance values as high as 25,000 micro mhos have been obtained in this way. A tentative equivalent circuit for the device is presented. Studies of the conduction processes in CdS-Al2O3-Al diodes continue. Thin films of CdS show resistivities of approximately 0.1 ohm-cm, mobilities of 10 cm squaredV-sec, and carrier concentrations of 7 x 10 to the 18th powercm cubed.

Subject Categories:

  • Solid State Physics
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE