Accession Number:

AD0408400

Title:

VOLTAGE SILICON RECTIFIER STACKS

Descriptive Note:

Quarterly progress rept. no. 7, 25 Dec 1962-25 Mar 1963

Corporate Author:

INTERNATIONAL RECTIFIER CORP LOS ANGELES CA

Personal Author(s):

Report Date:

1963-03-25

Pagination or Media Count:

134.0

Abstract:

A substantial redesign was made for the sixth set of engineering samples. The redesign was made to eliminate the problems experienced with the insulating fluid at elevated temperatures and to obtain a wider temperature range of operation. Preliminary tests showed the feasibility of the redesign and design tests on the first completed units showed the design to be successful. The new design required a reduction in the number of silicon rectifier diodes per stack. This was achieved by going to 1200 volts peak reverse voltage diodes. The 30 KV stack now contains 28 diodes in series and the 40 KV stack has 37 diodes in series. The reduction in the number of diodes together with an increase in the diode shunt resistance facilitates also the thermal problems. During the quarter the redesign was completed and material for the units pro cured. The sixth set of engineering samples was manufactured and successfully tested.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE