Accession Number:

AD0405928

Title:

INVESTIGATIONS OF SURFACE PROPERTIES OF SILICON AND OTHER SEMICONDUCTORS

Descriptive Note:

Final rept., (Supplement), 30 Sep 1962-31 Jan 1963

Corporate Author:

BROWN UNIV PROVIDENCE RI

Personal Author(s):

Report Date:

1963-02-01

Pagination or Media Count:

41.0

Abstract:

The photoelectric work functions of atomically clean surfaces of three planes niobium as measured by the Fowler method are 111, 4.66 335, 4. 55 110, 4.33 ev. The work function of ion bombarded surfaces of all three planes is 4.09 ev. The sticking coefficient for oxygen on the clean surfaces is 0.9 and on the ion bombarded surfaces is 0.2. The sticking coefficient for carbon monoxide on these surfaces was found to be at least an order of magnitude lower than the values quoted for oxygen. The work function of ion bombarded surfaces is found to be dependent on the extent of bombardment for bombardments of less than one minute carried out at 0.20 masquare centimeter . A work function of about 4.7 ev has been observed for a bombardment of 20 seconds on the 355 face. Ion-bombardment etching effects observed on the three planes are similar to those observed on germanium and silicon.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE