500 C SILICON CARBIDE RECTIFIER PROGRAM COVERING PERIOD 1 JANUARY TO 31 MARCH 1963
Interim technical progress rept. no. 6, 1 Jan-31 Mar 1963
WESTINGHOUSE ELECTRIC CORP DAYTON OH
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Efforts were continued on the production of 500 degree centigrade silicon carbide rectifiers. The effect of different sized cavities were investigated in the standard sublimation furnace. It was found that larger cavities greatly affect growth conditions and under normal circumstances little is gained by changing cavity geometry. Different heat sinks produced an effect on the crystal growth, but there was no significant effect on the increase of yield. Epitaxial growth of thin SiC layers of both p and n-type was achieved on silicon carbide substrates. Small area epitaxial rectifiers are being prepared for evaluation. A simplified passivation techniques developed for the one ampere rectifier.
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