Accession Number:

AD0405168

Title:

SUSCEPTIBILITY IN SEMICONDUCTORS

Descriptive Note:

Final rept., 1 Apr 1961-31 Mar 1963

Corporate Author:

DAVID SARNOFF RESEARCH CENTER PRINCETON NJ

Personal Author(s):

Report Date:

1963-03-01

Pagination or Media Count:

54.0

Abstract:

This report is concerned with the magnetic moment M of a plasma consisting of holes and electrons generated by light within a cylindrical semiconductor crystal immersed in a magnetic field. Macroscopic transport equations have been used to derive the dependence of M on field strength, mobility, and surface recombination conditions. In the limits of low and high surface recombination the theoretical result demonstrates the transition between transverse equilibrium M O and pure magnetic confinement M -nkTB. Experiments using germanium and an inhomogeneous magnetic field directly measured the diamagnetic force exerted by the plasma on its scattering medium. An induction method utilizing a uniform magnetic field of strength up to 70 kgauss gave collateral results. The dependence of the moment on magnetic field strength, light intensity, temperature, and surface recombination velocity support the theory.

Subject Categories:

  • Electricity and Magnetism
  • Solid State Physics
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE