Accession Number:

AD0405118

Title:

MECHANISM OF GOLD DIFFUSION INTO SILICON

Descriptive Note:

Corporate Author:

AEROSPACE CORP EL SEGUNDO CA

Personal Author(s):

Report Date:

1963-04-10

Pagination or Media Count:

42.0

Abstract:

Gold was found to diffuse into Si by a complex mechanism involving a vacancy-controlled inter stitial-substitutional equilibrium. This led to very complex diffusion concentration profiles. In analyzing the problem, a new experimental value was found for the self-diffusion coefficient of Si, 1.81 x 10 to the 4th power exp -11220 kcalRTsq cmsec, which compared very favorably with previous data on diffusion of Bi, Ge, and Sn in Si. The interstitial gold diffusion coefficient was found to be 2.4 x 10 to the minus 4th power exp -8.92 kcalRT, the substitutional gold-diffusion coefficient to be 2.75 x 10 to the minus 3rd power exp -4710 kcalRT, the equilibrium-interstitial gold solubility to be 5.95 x 10 to the 24th power exp -5810 kcalRT, and the equilibrium substitutional gold solubility Collins data below 1200C to be 8.15 x 10 to the 22nd power exp -40.6 kcalRT.

Subject Categories:

  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE