MECHANISM OF GOLD DIFFUSION INTO SILICON
AEROSPACE CORP EL SEGUNDO CA
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Gold was found to diffuse into Si by a complex mechanism involving a vacancy-controlled inter stitial-substitutional equilibrium. This led to very complex diffusion concentration profiles. In analyzing the problem, a new experimental value was found for the self-diffusion coefficient of Si, 1.81 x 10 to the 4th power exp -11220 kcalRTsq cmsec, which compared very favorably with previous data on diffusion of Bi, Ge, and Sn in Si. The interstitial gold diffusion coefficient was found to be 2.4 x 10 to the minus 4th power exp -8.92 kcalRT, the substitutional gold-diffusion coefficient to be 2.75 x 10 to the minus 3rd power exp -4710 kcalRT, the equilibrium-interstitial gold solubility to be 5.95 x 10 to the 24th power exp -5810 kcalRT, and the equilibrium substitutional gold solubility Collins data below 1200C to be 8.15 x 10 to the 22nd power exp -40.6 kcalRT.
- Physical Chemistry