Accession Number:

AD0404859

Title:

RESEARCH ON CdTe

Descriptive Note:

Quarterly progress rept. no. 8, 1 Feb-30 Apr 1963

Corporate Author:

GENERAL ELECTRIC CO SCHENECTADY NY

Report Date:

1963-04-30

Pagination or Media Count:

27.0

Abstract:

A model for the emission process is CdTe was set up which provides an explanation for the prop erties of this emission. An ination was begun with regard to the production of the double acceptor A2 center by electron bombardment. Several experiments have demonstrated that bomb ardment of CdTe crystals with 1.5 Mev electrons produces the A2 center very much like the heat treatment does. These two different methods pro duce essentially identical results. This confirms the previous assertion that the A2 center is in deed an intrinsic lattice defect. Some photocon ductivity experiments were begun on n- type samples containing the A2 center. Specifically we were interested in whether band gap excitation is nec essary to bring about the trapping of holes on the A2 center at low temperatures. With the use of a series of band pass filters it was shown that excitation of the center is effected by photons in the energy range from approximately 1.0 to 0.3 ev.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE