Accession Number:

AD0404537

Title:

PRODUCTION ENGINEERING MEASURE ON 2N1708 SILICON PLANAR EPITAXIAL TRANSISTOR

Descriptive Note:

Quarterly rept. no. 3, 1 Nov 1962-31 Jan 1963

Corporate Author:

RADIO CORP OF AMERICA SOMERVILLE NJ

Personal Author(s):

Report Date:

1963-01-31

Pagination or Media Count:

50.0

Abstract:

A technique of etching the wafers with anhydrous HCl in the epitaxial tube prior to epitaxial deposition was incorporated into the process. The oxide on the surface of the wafer serves as a mask during the diffusion operation and generally serves to protect the silicon surfaces during wafer processing. In performing these functions, however, impurities may be diffused into the oxide at the high diffusion temperatures. A method was developed providing the cleanest possible oxide to improve the surface protection on the finished pellets. Experiments are also being made on baking of oxide to diffuse entrapped water molecules to the surface for subsequent evaporation.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE