GALLIUM PHOSPHIDE DEVICES
Quarterly technical rept. no. 1, 14 Dec 1962 - 14 Mar 1963
EAGLE-PICHER RESEARCH LAB MIAMI OK
Pagination or Media Count:
Synthesis of gallium phosphide by an open flow technique, by passing P vapor over Ga2O3 in a H atmosphere was accomplished. Variations in color, and unreacted components were noted. Some involving varying temperatures, flow rates and time were carried out for the purpose of rationalizing product differences. Synthesis was best when P temperature and flow rate wereand when the Ga2O3 charge had minimum temperature gradients across it. Melt growth of the synthesized material was carried out. A total of 15 melts were made. Several were aborted due to malfunctions in furnacing. Several were partially successful, but produced heavily occluded ingots. Several were successful in that ingots were clear, with few if any inclusions and good crystal structure, although not single crystal. Vapor phase growth studies were done in parallel with melt growth. Initial results appear promising.
- Electrical and Electronic Equipment
- Solid State Physics