PROPERTIES OF MINIATURIZED TUNNEL DIODE CIRCUITS AT MICROWAVE FREQUENCIES
NAVAL ORDNANCE LAB CORONA CA
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The state of the art of semiconductor devices, especially tunnel diodes, is such that it is presently feasible to construct small, sensitive, low-power tuned RF microwave receivers up to and including K-band frequencies using only semiconductors as the active elements. Such a receiver might use tunnel diodes as the RF amplifier and detector and a transistor as the video amplifier. Receiver circuits of this type are shown to operate with a noise figure on the order of 5 db at frequencies at 10 Gc and above. Experiments indicate that tunnel diode operation at higher frequencies is possible, but the tunnel diodes should be physically integrated into the micro wave structures for practical operation at 35 Gc. Tunnel diodes are very promising where low-level, broadband signals are needed.
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