HIGH CURRENT AND HIGH VOLTAGE SILICON CONTROLLED RECTIFIERS
Quarterly rept. 3, 1 Jan-31 Mar 1963
WESTINGHOUSE ELECTRIC CORP WASHINGTON DC
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Both crucible grown and float-zone silicon crystals were received and processed through the initial stages of device fabrication. Evaluation data on both types of material are presented. Minor modifications of the basic device structure and encapsulation design are noted. Sample fabrication directed toward more complete evaluation of the device design and generation of state-of- art samples is discussed. Some problems which arose during this work are described. Electrical evaluation data on prototype samples encapsulated are given.
- Electrical and Electronic Equipment