EVAPORATED THIN-FILM DEVICES
Scientific rept. no. 2, 1 Dec 1962-28 Feb 1963
RADIO CORP OF AMERICA CAMDEN NJ DEFENSE ELECTRONIC PRODUCTS
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An improved electrode arrangement for the in sulated-gate thin-film transistor has yielded higher performance and greater ease of fabrica tion. On- to-off current ratios of ten to the seventh power, input resistance exceeding ten to the tenth power ohms, and gain-bandwidth products of 25 megacycles have been obtained with polycrystalline cadmium sulfide films. By de positing all electrodes on top of the semicon ductor, maximum freedom in processing the semi conductor layer is obtained. A novel type of field-effect diode is described.
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