Accession Number:

AD0402887

Title:

EVAPORATED THIN-FILM DEVICES

Descriptive Note:

Scientific rept. no. 2, 1 Dec 1962-28 Feb 1963

Corporate Author:

RADIO CORP OF AMERICA CAMDEN NJ DEFENSE ELECTRONIC PRODUCTS

Report Date:

1963-03-10

Pagination or Media Count:

38.0

Abstract:

An improved electrode arrangement for the in sulated-gate thin-film transistor has yielded higher performance and greater ease of fabrica tion. On- to-off current ratios of ten to the seventh power, input resistance exceeding ten to the tenth power ohms, and gain-bandwidth products of 25 megacycles have been obtained with polycrystalline cadmium sulfide films. By de positing all electrodes on top of the semicon ductor, maximum freedom in processing the semi conductor layer is obtained. A novel type of field-effect diode is described.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE