Accession Number:

AD0339501

Title:

EFFECT OF NUCLEAR RADIATION ON SEMICONDUCTOR DEVICES

Descriptive Note:

Final rept.

Corporate Author:

HARRY DIAMOND LABS ADELPHI MD

Report Date:

1960-10-07

Pagination or Media Count:

26.0

Abstract:

Research concerned the continued effects of neutron, gamma, and electromagnetic radiation upon commercially available transistors, diodes, and electronic circuits employing these components. A total of 350 transistors and semiconductor diodes, including germanium and silicon types, were exposed to nuclear detonations. Some of the transistors were operational during exposure as oscillators, amplifiers, and trigger circuits. Radiation levels varied from 10 to the 11th power to 4 times 10 to the 14th power NVT nsq cm integrated neutron flux, accompanied by gamma radiation between 0.1nd 100,000 r. The transistors showed a decrease in common-emitter current gain and an increase in collector-diode reverse leakage current. The higher-frequency transistors were less affected by neutron fluxes than were the audio units, and the surface-barrier types were virtually undamaged by the maximum fluxes obtained. Semiconductor diodes showed an increase in forward resistance and a decrease in black resistance.

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE