SEMICONDUCTOR RESISTIVE ELEMENT
TEXAS INSTRUMENTS INC DALLAS
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The general objective of producing a low temperature coefficient of resistance TCR device from a miconductor material was only partially successful. Typical TCR device values above room temperature were never much lower than 150 ppmC for the silicon resistive element investigated. Low temperature TCR values at -50 C were around 500 ppmC. Load-life stability and resistance to environments moisture, oxidation proved as good or better than thinfilm resistors on the market. Specific problems encountered such as ohmic contacts, resistance adjustment, junction effects, etc. and their solutions are discussed in detail. A manufacturing procedure for producing a polycrystalline silicon device is included.
- Electrical and Electronic Equipment