Accession Number:

AD0297033

Title:

FAILURE MECHANISMS IN SILICON SEMICONDUCTORS

Descriptive Note:

Corporate Author:

CLEVITE TRANSISTOR MOUNTAIN VIEW CA SHOCKLEY TRANSISTOR DIV

Personal Author(s):

Report Date:

1963-01-15

Pagination or Media Count:

294.0

Abstract:

Lattice defects in silicon and their effects on performance and reliability of semiconductor devices are investigated. Grain boundary dislocations, twin boundaries, and stacking faults in epitaxial layers are also investigated. Gallium diffusion along grain boundaries is studied. Impurity atmospheres are found to influence the electrical properties of dislocations. A new method of bicrystal growing is described. Stacking faults originate from oxygen impurities at the substrate used for epitaxy. The faults cause preferential microplasma breakdown. The problem of thermal lateral instability in transistor and thermistor structures is also investigated. Experimental evidence is presented for the existence of localized hot spots with elevated current densities and temperatures. This phenomenon is related to the second breakdown failure mechanisms in transistors.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE