Accession Number:

AD0296370

Title:

SEMICONDUCTOR DEVICE CONCEPTS

Descriptive Note:

Corporate Author:

GENERAL ELECTRIC RESEARCH LAB SCHENECTADY NY

Personal Author(s):

Report Date:

1962-11-30

Pagination or Media Count:

90.0

Abstract:

The effects of uniaxial compression and of hydrostatic pressure on the direct and indirect tunneling processes in germanium tunnel diodes were studied experimentally under forward and reverse bias at 4.2 K and compared with Kanes theory. The diodes were formed by alloying indium doped with 38 weight per cent gallium on 100 and 110 faces of germanium bars containing an antimony concentration of 5.5 x 10 to the 18th cub. cm. The first order change of the tunneling current with stress was measured at fixed bias voltages. Electrical transport measurement was made on p-type ZnTe and n-type ZnSe. In ZnTe crystals doping with Cu, Ag and Au produces acceptor levels at 0.15, 0.11, and 0.22 ev respectively. An acceptor with an ionization energy of 0.048 ev was found in the undoped crystals and is identified as the first charge state of the Zn-vacancy. The scattering mechanisms limiting the lattice mobilities of both materials were considered. It was found that the polar interaction with the longitudinal optical phonons dominates the scattering of electrons in ZnSe. Luminescence from p-n junctions constructed from the mixed crystal GaAs1-xPx and from GaSb was studied. Attempts to produce coherent radiation from these junctions has thus far been unsuccessful.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE