INVESTIGATION OF HOT ELECTRON EMITTER
AIR FORCE CAMBRIDGE RESEARCH LABS HANSCOM AFB MA
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Analysis is presented of the frequency performance of various metal-base hot carrier triode amplifiers which differ only in the type of hot carrier emitter they utilize. The triodes considered are 1 the SMS, or semiconductor metal-semiconductor, triode utilizing a Schottky barrier emitter 2 the space charge limited emitter triode and 3 the tunnel-emitter triode. The results are compared with the performance of the bipolar germanium junction transistor. It is shown that for all three hot carrier triodes, the maximum gain-band product increases with current density and approaches an asymptotic limit which is due to collector limitation. It is further shown, however, that this limit is closely approached at reasonable current density only by the SMS triode. At an emitter current density of 1000 ampsq cm and a stripe width of 10 microns, the maximum gain band products or maximum oscillating frequencies, are 60 kmcsec for the SMS triode, 38 for the space charge limited emitter triode, and 10 for the tunnel-emitter triode.
- Electricity and Magnetism
- Electrical and Electronic Equipment