THE TRAVELLING SOLVENT METHOD OF CRYSTAL GROWTH
Quarterly rept. no. 6, 16 Aug-15 Nov 1962
TYCO LABS INC WALTHAM MA
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Large crystals of alpha-SiC have been grown from solution in chromium by the traveling solvent method at an average temperature of ca. 1800 C. The major problem has been the proper wetting of the SiC surface by chromium this problem has not been solved using an ultrahigh vacuum heating treatment, followed by the evaporation of chromium onto the clean surfaces. Preliminary experiments using silicon and platinum as solvents have shown encouraging results.