PRODUCTION RELIABILITY IMPROVEMENT PROGRAM FOR GERMANIUM TRANSISTOR 2N1430
BENDIX CORP HOLMDEL NJ BENDIX SEMICONDUCTOR DIV
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Effort was continued toward improving production techniques to improve the reliability of the 2N1430 germanium transistor using as an objective a maximum operating failure rate of 0.05 per 1000 hours at a 90 confidence level of C. Major areas considered were 1 resistivity control, etch pit control, uniform penetration in diffusion depth control in alloying, spr ding and wetting in alloying, collector attachment, surface passivation, final preparation prior to sealing, gettering technique, and leak determination information and data to demonstrate the results in the areas of study and 3 quality control measures to insure accuracy and reliability of established process techniques.
- Manufacturing and Industrial Engineering and Control of Production Systems