Accession Number:

AD0295056

Title:

HIGH EFFICIENCY SILICON SOLAR CELLS

Descriptive Note:

Quarterly progress rept. no. 1

Corporate Author:

TEXTRON ELECTRONICS INC SYLMAR CA HELIOTEK DIV

Report Date:

1962-09-15

Pagination or Media Count:

78.0

Abstract:

Preliminary experiments were performed on NP and PN cells having various junction depths to determine the effects of light intensity on cell performance for various cell configurations. Preliminary results indicated that cells diffused twice as long as standard production-type cells operate more efficiently at the higher solar intensities. The shallow diffused cells had higher short circuit currents indicating higher potential efficiencies with the use of optimized grid designs to further reduce series resistance. Theoretical calculations were carried out to determine the optimum grid configuration for shallow-diffused cells. Results indicated that the optimum grid spacing is very insensitive to changes in light level if all other variables are held constant. The grid spacing does, however, change significantly with various A-factor values. Possibly through this mechanism the optimized grid spacing changes as a function of light level. A detailed solar cell equivalent series resistance circuit is presented. Studies were made to determine where the cell series resistance is located and which locations are more important with respect to the reduction of the total series resistance.

Subject Categories:

  • Inorganic Chemistry
  • Electric Power Production and Distribution

Distribution Statement:

APPROVED FOR PUBLIC RELEASE