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DESIGN CONSIDERATIONS FOR MICROWAVE GERMANIUM TUNNEL DIODES
ARMY ELECTRONICS LABS FORT MONMOUTH N J
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A discussion is presented on the technology and problems involved in the design considerations, fabrication, and measurement of germanium tunnel diodes. Fabrication includes material preparation, methods of creating abrupt p-n junctions such as dot alloying, electrical forming or pulse discharge forming and solution growth, etching procedures necessary to obtain low peak currents and high peak to valley current ratios, and packaging considerations for low series inductance. Measurement techniques to determine the important high-frequency parameters, RS, LS, C, and RN, of the diode are discussed. The results of experimental units exhibiting cutoff frequencies up to 5 gc are tabulated. Author
APPROVED FOR PUBLIC RELEASE