Accession Number:

AD0294788

Title:

DESIGN CONSIDERATIONS FOR MICROWAVE GERMANIUM TUNNEL DIODES

Descriptive Note:

Corporate Author:

ARMY ELECTRONICS LABS FORT MONMOUTH N J

Personal Author(s):

• WANDINGER,L.
• KLOHN,K.

Report Date:

1962-09-01

Pagination or Media Count:

1.0

Abstract:

A discussion is presented on the technology and problems involved in the design considerations, fabrication, and measurement of germanium tunnel diodes. Fabrication includes material preparation, methods of creating abrupt p-n junctions such as dot alloying, electrical forming or pulse discharge forming and solution growth, etching procedures necessary to obtain low peak currents and high peak to valley current ratios, and packaging considerations for low series inductance. Measurement techniques to determine the important high-frequency parameters, RS, LS, C, and RN, of the diode are discussed. The results of experimental units exhibiting cutoff frequencies up to 5 gc are tabulated. Author

Descriptors:

• *DIODES
• *MANUFACTURING
• *SEMICONDUCTORS
• CHEMICAL MILLING
• ELECTROFORMING
• ENCAPSULATION
• GERMANIUM
• MEASUREMENT
• MICROWAVE EQUIPMENT
• NEGATIVE RESISTANCE CIRCUITS
• PRODUCTION
• ELECTRICAL RESISTANCE
• SURFACE PROPERTIES

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE