Accession Number:

AD0294715

Title:

ACTIVE THIN-FILM TECHNIQUES MICROMIN PROGRAM

Descriptive Note:

Corporate Author:

SYLVANIA ELECTRIC PRODUCTS INC WALTHAM MASS

Personal Author(s):

• RASMANIS,EGONS
• CLINE,JAMES

Report Date:

1963-01-14

Pagination or Media Count:

1.0

Abstract:

Research was continued to develop a process for depositing device-quality silicon andor germanium films on polycrystalline insulating substrates by vacuum evaporation of silicon andor germanium, then to form diodes and transistors in these films. The ultra-high vacuum evaporator was installed in the laboratory and a total of 29 silicon depositing runs were made. The results of high magnification optical examination of the silicon films for surface structure are encouraging. Optical studies and Hall Effect measurements were carried out on silicon films produced by pyrolytic deposition, and vacuum deposition. Author

Descriptors:

• *DIODES
• *SEMICONDUCTING FILMS
• *TRANSISTORS
• CRYSTAL STRUCTURE
• CRYSTALS
• EVAPORATORS
• GROWTH(PHYSIOLOGY)
• HALL EFFECT
• LIFE EXPECTANCY(SERVICE LIFE)
• MANUFACTURING
• MEASUREMENT
• MICROSCOPY
• NUCLEATION
• PRODUCTION
• ELECTRICAL RESISTANCE
• SEMICONDUCTORS
• SINGLE CRYSTALS
• SURFACES
• THIN FILM STORAGE DEVICES
• VACUUM APPARATUS
• VAPOR PLATING

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE