Accession Number:

AD0294491

Title:

SEMICONDUCTOR THIN FILMS

Descriptive Note:

Corporate Author:

LEAR INC GRAND RAPIDS MICH

Personal Author(s):

• AXELROD,J.M.

Report Date:

1962-09-30

Pagination or Media Count:

1.0

Abstract:

A new source has been designed to eliminate sticking particles on silicon and any future gallium arsenide deposits. Deposits of germanium, gallium arsenide and silicon have defects which are detectable by x-ray diffraction examination as a light diffuse X centered on the main diffraction spot. Electron microscopy of germanium and gallium arsenide films, peeled from calcium fluoride, which are thin enough for examination shows the presence of enough defects to account for the diffuse x-ray reflections. A small fused silica vacuum system will be made and used for deposition. The system will be baked at 500 - 1000 C while pumped to 1 microtorr, then sealed with molten tin or germanium and cooled. Silicon will be deposited by heating the source and substrate holder inductively. Deposits of germanium and gallium arsenide on calcium fluoride were measured for resistivity and conductivity type and submitted for mobility measurements.

Descriptors:

• *CRYSTAL STRUCTURE
• *PROCESSING
• *VACUUM APPARATUS
• ARSENIDES
• BERYLLIUM COMPOUNDS
• CARBIDES
• ELECTRICAL CONDUCTIVITY
• ELECTRON MICROSCOPY
• GALLIUM COMPOUNDS
• GERMANIUM
• HIGH TEMPERATURE
• OXIDES
• ELECTRICAL RESISTANCE
• SEMICONDUCTORS
• SILICON
• SILICON COMPOUNDS
• SINGLE CRYSTALS
• THIN FILM STORAGE DEVICES
• X RAY DIFFRACTION

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE