Accession Number:

AD0294030

Title:

PHOTRONICS.

Descriptive Note:

Interim engineering rept. no. 2, 16 Aug-15 Nov 62,

Corporate Author:

AMELCO INC MOUNTAIN VIEW CALIF

Personal Author(s):

Report Date:

1962-11-15

Pagination or Media Count:

32.0

Abstract:

Research was continued on a photon flux employed to transfer electrical ignals from one circuit to another and to combine these signals without any electrical interconnection of circuits. P-n junctions offer a means of performing the basic functions of photon transmission and reception. By the use of double-injection diodes formed on silicon by planar techniques it has been found that most of the forward-current recombination radiation is produced in the highly-doped regions, but that the probability of rdiative recombination is higher in the more nearly intrinsic regions. The probability of radiative recombination of electrons in a boron-doped, p region was found to be about the same as for holes in phosphorus-doped, n region. Light-coupled transducers, phototransistor-processed dice attached to either end of a glass light-pipe, have been made with current-transfer coefficients as high as 8 x 10 to the -7th power. These transducers operate with either forward or reverse-current input. The reverse-current linearity was the best and extended over a decade range of current. Double-injection diodes have shown a dynamic pinch effect with a high rate of rise of current and, with heavy gold doping, a negative-resistance region. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE