Accession Number:

AD0293497

Title:

STUDY OF SURFACE PROPERTIES OF ATOMICALLY-CLEAN METALS AND SEMICONDUCTORS

Descriptive Note:

Corporate Author:

BROWN UNIV PROVIDENCE RI BARUS RESEARCH LAB OF PHYSICS

Personal Author(s):

Report Date:

1962-10-01

Pagination or Media Count:

44.0

Abstract:

This report includes A SEARCH FOR HYDROGEN - DEUTERIUM EXCHANGE ON CLEAN GERMANIUM SURFACES, by D. Shooter and H. E. Farnsworth. 9 June 61, 3p. Reprint from Jnl. of Physical Chemistry 66222-224, 1962 INVESTIGATIONS OF 100 AND 111 SURFACES OF SEMICONDUCTING DIAMOND BY LOW-ENERGY ELECTRON DIFFRACTION. 1962, 38p. incl. illus. tables. Previous experiments have shown that for germanium, silicon, and intermetallic compounds having a diamond type lattice, the positions of the atoms in the surface monolayer are displaced from their normal volume positions, so as to produce fractional order beams in certain azimuths. Low-energy below 350 ev electron diffraction patterns characteristic of the normal or x-ray surface lattice spacing of diamond have been obtained for both the 111 and 100 surfaces after only the usual bake-out of the tube at 300 C. Additional heating of the diamond produces an increase in pattern intensity to 100, but heating above about 450 C in vacuum causes a decrease in diffracted intensity, due to a phase transformation in one or more surface monolayers. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE