Accession Number:

AD0293248

Title:

MASS SPECTROGRAPHIC EVIDENCE FOR DEVIATIONS FROM STOICHIOMETRY IN GASB

Descriptive Note:

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

Report Date:

1962-12-01

Pagination or Media Count:

1.0

Abstract:

he purest Ga b now made is p-type. At roo temperature this material contains free holes at concentrations between 1 and 2 x 10 to he 17th power per cc I order to obtain additional evidence concerning whether the acceptors are impurity atoms or la tice defects as ocia ed with deviations from toichiometry, G AS B HAS BEEN ANALYZED WITH A SPARK SOURCE MASS SPECTROGRAPH WHICH OUR CALIBRATION SHOWS TO BE CAPABLE OF DETECTING ALMOST ALL IMPURITY EL MENT WHICH ARE PRESE T A CONCENTRATIONS E CEEDING X TO THE TH POWER PER CC. The only elemen s detected besides Ga and Sb were 1 Si at a concentration of 5 x 10 to he 16th power per cc or less and 2 C, O, , and N, the levels of whic were comparable to those obtained i blank runs, so that their concentration in the G ASb cannot be estimated. Of the latter elements, only carbon is likely to be a shallow acc ptor in G Sb, a m tallurgical evidence indicates that it should not b present at constant concentration in purified material. T HE NALYTICAL RESULTS THEREFORE STRONGLY INCREASE THE PROBABILITY THAT THE ACCEPTORS ARE LATTICE DEFECTS RAT ER THAN IMPURITY ATOMS. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE