Accession Number:

AD0292762

Title:

RADIATION ENHANCED DIFFUSION IN SILICON. 2. DESIGN OF A MICROCALORIMETER. STORED ENERGY MEASUREMENT IN IRRADIATED GERMANIUM. 3. STUDY OF DEFECT MOBILITY IN IRRADIATED GERMANIUM

Descriptive Note:

Corporate Author:

ECOLE NORMALE SUPERIEURE PARIS (FRANCE)

Personal Author(s):

Report Date:

1962-07-25

Pagination or Media Count:

1.0

Abstract:

Radiation enhanced diffusion of impurities has been studied on silicon irradiated at high temperatures 800 to 1100 C by 250-1000 kev protons. Electrically active impurities, as shown by position of p-n junctions, diffuse faster in irradiated regions. A point defect mechanism is proposed, and a diffusion coefficient of the active defect is obtained. A cryostat and calorimeter were designed for a stored energy measurement in germanium irradiated at 20 K by 2 Mev electrons. Problems of heat transfer and insulation are discussed. Radiation induced defects have been shown, in former work, to drift in the electric field of a p-n junction, irradiated with electrons or gamma-rays. The same effect occurred with neutron irradiation. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE