Accession Number:

AD0291922

Title:

A STUDY OF HIGH-LOW JUNCTIONS AND HIGH-LOW JUNCTION SEMICONDUCTOR DEVICES

Descriptive Note:

Corporate Author:

CARNEGIE INST OF TECH PITTSBURGH PA

Personal Author(s):

Report Date:

1962-11-01

Pagination or Media Count:

1.0

Abstract:

The primary objectives were to study the electrical behavior of high-low junctions and their effects on the terminal properties of semiconductor devices in which they are employed. Specifically, a study of the isolated high-low interface bounded by two semi-infinite, quasineutral bulk regions has resulted in a set of boundary conditions relating the non-equilibrium carrier densities across the junction to the total, solenoidal current density. In forward bias two distinct classes of RNN R devices were considered. The first study assumes the lightly doped side to be intrinsic while the second takes this region as extrinsic. For the intrinsic case, both static and dynamic studies were conducted without the usual unity injection efficiency assumption and as a result, the model is more accurate than those employed in the earlier literature. The extrinsic studies indicate a region of linearity followed by gross nonlinearities at high current levels. The reverse bias properties of high-low junction devices were studied from both the static and dynamic viewpoints and it is shown that for fairly extrinsic low side materials, the structure is linear. Nonlinearity and capacitive reactance effects in near intrinsic low regions are attributed to a minority carrier exclusion effect. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE