Accession Number:

AD0291844

Title:

RADIATION EFFECTS ON SEMICONDUCTOR CATALYSTS

Descriptive Note:

Corporate Author:

AERONAUTICAL SYSTEMS DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

• SOSNOVOSKY,H.C.

Report Date:

1962-10-01

Pagination or Media Count:

33.0

Abstract:

The effect of ion bombardment on carrier lifetime, photoconductivity, and surface tructure of germanium 111 crystals was investigated after bombardment at voltages between 10 and 2000 v. I T WAS FOUND THAT THE LIFETIME DECREASED SIGNIFICANTLY AT BOMBAR ING VOLTAGES ABOVE V AND THAT THE NUMBER OF DEFECTS IN THE SURFACE REGION INCREASED SIMULTANEOUSLY BY SEVERAL ORDERS OF MAGNITUDES. These efects are most likely dislocations and vacancy clusters. Less table defects were introduced at very low bombarding voltages but these too were found to affect the electrical properties of the bombarded s rfaces appreciably. preliminary results of the effect of adsorbed gases on the properties of ion bom arded surfaces and the effect of neutr n bombardment on the catalytic exchange of ydrogen with deuterium on etc ed surfaces are included. Author

Descriptors:

• *RADIATION EFFECTS
• *SEMICONDUCTORS
• ADSORPTION
• CRYSTALS
• ELECTRICAL PROPERTIES
• GASES
• GERMANIUM
• ION BOMBARDMENT
• PHOTOCONDUCTIVITY
• SURFACES

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE