Accession Number:

AD0291601

Title:

ACTIVE THIN FILM CIRCUIT FUNCTIONS

Descriptive Note:

Corporate Author:

UNION CARBIDE CORP PARMA OHIO

Personal Author(s):

Report Date:

1962-08-31

Pagination or Media Count:

1.0

Abstract:

A STUDY WAS INITIATED OF THE PROBLEM OF PRODUCING A THIN SINGLE CRYSTAL FILM OF SILICON ON A FOREIGN SUBSTRATE, PREFERABLY ONE NORMALLY USED IN ELECTRONIC TECHNOLOGY. The likely techniques of deposition of silicon films such as vacuum evaporation or chemical reduction methods are explored on a theoretical basis as is the process of epitaxial crystal growth. The choice of suitable substrate materials is also considered. Based on these considerations and prior experience, apparatus was assembled and a series of experimental trials were ma e. hile the problem is a difficult one, even these early results are hopeful. Single crystal epitaxial growths were obtaine on a variety of single crystal substrates which were used as controls. In addition, preferred orientations and partial crystal growth ere observed on other substrates of several types. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE