Accession Number:

AD0289378

Title:

HIGH VOLTAGE SILICON RECTIFIER STACKS

Descriptive Note:

Corporate Author:

INTERNATIONAL RECTIFIER CORP LOS ANGELES CALIF

Personal Author(s):

Report Date:

1962-09-01

Pagination or Media Count:

1.0

Abstract:

Design testing of the third engineering samples was started. The first unit of the fourth engineering samples was built having an internal expansion chamber, corona endshields and a lesser number of higher voltage rectifier diodes. Thermal measurements confirmed closely the original calculations of temperature rise for the rectifier stack. The reduction in the number of rectifier diodes in the fourth engineering samples reduces the temperature rise appreciably. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE