Accession Number:

AD0289374

Title:

SEMICONDUCTOR DEVICE CONCEPTS

Descriptive Note:

Corporate Author:

GENERAL ELECTRIC CO SYRACUSE N Y

Personal Author(s):

Report Date:

1962-08-31

Pagination or Media Count:

1.0

Abstract:

Double injection diodes are described which, depending upon the kind of deep level doping impurities empolyed, exhibit instabilities and coherent andor noisy oscillations in normally positive resistance regions of the v-i characteristics. Similar oscillations in n-type bars of Silicon compensated with certain deep level impurities are also described. The influence of deep levels on these phenomena is discussed. Some preliminary results on experiments with As sub x P sub 1-x light emitting junctions are presented. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE