Accession Number:

AD0287466

Title:

EPITAXIAL CONTROL SYSTEM

Descriptive Note:

Scientific rept. no. 2

Corporate Author:

MOTOROLA INC PHOENIX AZ

Personal Author(s):

Report Date:

1962-06-14

Pagination or Media Count:

24.0

Abstract:

A highly sensitive mass spectrometer was selected for use in a vapor stream analysis system for an epitaxial growth reactor. The instrument will be used to monitor gas phase compositions. PRELIMINARY CALCULATIONS INDICATE THAT IT WILL BE FEASIBLE TO MONITOR GAS PHASE IMPURITIES WHICH will yield epitaxial film resistivities of from .001 to 100 chm-cm, N AND P TYPE IMPURITIES. Silicon compounds will be subject to continuous analysis. Some anticipated problems are the loss of sensitivity due to corrosive nature of gases under investigation, interference from background cases, and unusually low impurity concentrations in the vapor sample.

Subject Categories:

  • Crystallography
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE