EPITAXIAL CONTROL SYSTEM
Scientific rept. no. 2
MOTOROLA INC PHOENIX AZ
Pagination or Media Count:
A highly sensitive mass spectrometer was selected for use in a vapor stream analysis system for an epitaxial growth reactor. The instrument will be used to monitor gas phase compositions. PRELIMINARY CALCULATIONS INDICATE THAT IT WILL BE FEASIBLE TO MONITOR GAS PHASE IMPURITIES WHICH will yield epitaxial film resistivities of from .001 to 100 chm-cm, N AND P TYPE IMPURITIES. Silicon compounds will be subject to continuous analysis. Some anticipated problems are the loss of sensitivity due to corrosive nature of gases under investigation, interference from background cases, and unusually low impurity concentrations in the vapor sample.
- Manufacturing and Industrial Engineering and Control of Production Systems