Accession Number:

AD0285210

Title:

THEORETICAL AND EXPERIMENTAL STUDIES RELATING TO MECHANISMS OF FAILURE OF SEMICONDUCTOR DEVICES

Descriptive Note:

Corporate Author:

SYRACUSE UNIV N Y

Personal Author(s):

Report Date:

1962-05-21

Pagination or Media Count:

1.0

Abstract:

DESCRIPTORS Semiconductors, Transistors, Diodes, Failure Mechanics, Life expectancy, Deterioration, Reliability, Noise Radio, Measurement, Mathematical analysis, Statis tical functions, Surface properties, Electric fields, Voltage, Electrical properties, Elec tronic equipment, Design, Manufacturing method, Processing, Germanium, Gallium compounds, Arsenides, Test methods. Identifiers Tunnel diodes. Various aspects of semiconductor device theory were studied to arrive at a better understanding of the physical processes involved in the degradation and failure of such devices. Low frequency noise was investigated and mathematical models for 1f noise were developed for power spectral density functions and correlation functions. Considerations relating to relative ease of developing measurement techniques of power spectral density functions and correlation functions are discussed. Zener breakdown and avalanche breakdown phenomena in p-n junctions were investigated analytically and experimentally at localized points of breakdown referred to as microplasmas. A theory of failure was postulated for gallium arsenide tunnel diodes. A theoretical model of a semiconductor surface is developed and a number of measurements made which are intended to correlate with this model. These involve potential measurements on floating electrodes, reverse current drift measurements, field effect measurements, and mechanical stress application and measurements. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE