Accession Number:

AD0283421

Title:

INSULATED GATE FIELD EFFECT SILICON TRIODES

Descriptive Note:

Corporate Author:

DAVID SARNOFF RESEARCH CENTER PRINCETON N J

Personal Author(s):

Report Date:

1962-06-01

Pagination or Media Count:

1.0

Abstract:

IT HAS BEEN OBSERVED EXPERIMENTALLY THAT THERMALLY GROWN SILICON DIOXIDE NOT ONLY PASSIVATES THE SILICON SURFACE, BUT ALSO LEAVES A THIN N-TYPE CONDUCTING SKIN ON THE SURFACE OF INTRINSIC SILICON. A full investigation of this phenomenon is underway. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE