THE OPTICAL AND ELECTRICAL PROPERTIES OF SINGLE CRYSTAL TELLURIUM.
HONEYWELL RESEARCH CENTER HOPKINS MINN
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Work on zone purification and growth of doped and undoped single crystals is noted. Mechanical properties, plastic damage, and identification of dislocations by etch pits are briefly covered. A section on optical properties notes out discovery of optical activity in tellurium, and details the work on intrinsic optical absorption, showing how this implies a vertical transition at the absorption edge, which is allowed for E perpendicular to C and forbidden for E parallel to C. The report goes on to recapitulate the progress made in understanding recombination processes in tellurium both flaw processes and band-to-band processes. A section on transport effects outlines the extensive studies made of magnetoresistance, and the recent measurements of hole mobility at low temperatures in doped and undoped crystals. Finally, some of the expectations concerning the energy band structure of tellurium are reviewed. Author