HOT CARRIER PHENOMENA IN SEMICONDUCTORS AT MICROWAVE FREQUENCIES.
Quarterly rept. no. 4, 15 Feb-15 May 62,
GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE N Y
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Measurements of recombination in Cu- and Ni- doped Ge, using contact injection, were made and corrected for surface recombination. The data for GeNi at room and dry ice temps. are similar for GeCu they are different in that lifetime first increases with field, then decreases at the low temp. Throughout this temp. range, the following appear to be established 1 the electron capture cross section for neutral Ni and neutral Cu decreases rapidly with electron speed and 2 for Cu- it is essentially independent of speed. The difference in speed-dependence of neutral and negatively-charged centers seems attributable to the Coulomb barrier of the latter. Complex conductivities of n-Ge are reported for 3 samples in different orientations and comparable dc resistivites at 78k. For n-InSb at 78k, large negative values of dielectric constant were found. Author