Accession Number:

AD0276744

Title:

DETERMINATION OF ELECTRONIC PROPERTIES OF SEMICONDUCTING MATERIALS

Descriptive Note:

Final rept. 15 Apr 60-15 Oct 61

Corporate Author:

PENNSYLVANIA UNIV PHILADELPHIA MOORE SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1961-10-01

Pagination or Media Count:

40.0

Abstract:

Values of surface potentials for etched and oxidized surfaces p- and n-type Si crystals were obtained from the measurements of surface photovoltage and photoconductivity. The p-type samples had resistivities ranging from 1 to 3400 ohm-cm and those of n-type from 1.1 to 1100 ohmcm. Surface potentials on etched and oxidized n-and p-type Si crystals were as high as 1 v and, except for n-type etched crystals, appeared to increase in absolute value with increasing resistivity. The surface potential of both pand n-types decreased by about 21 kTe after oxidation. Surface photovoltage values of 1.2 kTe for 520 ohm-cm silicon and -0.9 for 46 ohm-cm silicon were obtained. These may be compared with values of 0.14 ev obtained. The oxidized surfaces prepared were stable over several weeks. However, indications are that after several months the high surface voltages deteriorate to values more in line with theoretical values. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE